| PART |
Description |
Maker |
| RJK03P9DPA-00-J5A |
Built in SBD Dual N-channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03H1DPA RJK03H1DPA-00-J5A RJK03H1DPA13 |
30V, 45A, 2.4m max. Built in SBD N Channel Power MOS FET
|
Renesas Electronics Corporation
|
| RJK03N4DPA |
30V, 45A, 2.4m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03N2DPA |
30V, 40A, 4.0m max Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03N3DPA |
30V, 35A, 4.7m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| MCH5811 |
Nch SBD
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
| MCH5818 |
Pch SBD
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode
|
Sanyo Semicon Device
|
| CPH5824 |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications MOSFET的：N沟道MOSFET的硅SBD智能交通：肖特基二极管通用开关器件应
Nch SBD
|
Sanyo Electric Co., Ltd.
Sanyo Semicon Device
|
| PU7457 |
Silicon N-Channel Power F-MOS FET (with built-in zener diode)
|
Panasonic Semiconductor
|
| MB40568PF MB40568P-SK |
A/D Converter (1-channel, 8-bit low-power model with built-in clamp circuit)
|
Fujitsu Limited
Fujitsu Component Limited.
|
| MM1096BD MM1096BS MM1096B MM1096BF MM1096AF MM1096 |
System Reset (with built-in watchdog timer) Monolithic MM1096 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PSIP8
|
MITSUMI ELECTRIC CO., LTD.
Mitsumi Electronics, Corp.
|
| SMA4032 |
3 A, 100 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR
NPN Darlington With built-in flywheel diode
|
SANKEN[Sanken electric]
|
